DOE Office of Basic Energy Sciences user facility.

This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. We will also show results of using these amplifiers with SETs at 4 K.

The AC Current Amplifier maximizes gain at nearly 800 A/A. The AC HBT allows in-situ adjustment of power dissipation during an experiment and can provide gain in the millikelvin temperature regime while dissipating less than 500 nW. We will introduce two new amplifier topologies that provide excellent gain versus power tradeoffs using silicon-germanium ( SiGe) heterojunction bipolar transistors (HBTs). From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. The topics include: 1) Introduction 2) TID and SEU in SiGe Technology 3) RHBD Techniques 4) Experiment 5) Heavy-Ion Data and Analysis and 6) Summary.įlexible Low-power SiGe HBT Amplifier Circuits for Fast Single-shot Spin ReadoutĮngland, Troy Lilly, Michael Curry, Matthew Carr, Stephen Carroll, Malcolmįast, low-power quantum state readout is one of many challenges facing quantum information processing. Marshall, Cheryl J.Ī viewgraph presentation on SEU tolerant SiGe HBT technology is shown. Recent Results on SEU Hardening of SiGe HBT Logic Circuits

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